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  tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors product information 1 march 1994 - revised march 2000 copyright ? 2000, power innovations limited, uk information is current as of publication date. products conform to specifications in accordance with the terms of power innovations standard warranty. production processing does not necessarily include testing of all parameters. telecommunication system secondary protection  patented ion-implanted breakdown region ? precise dc and dynamic voltages  planar passivated junctions ? low off-state current ....................< 10 a  rated for international surge wave shapes ? single and simultaneous impulses  ..................ul recognized component description the tisp7xxxf3 series are 3-point overvoltage protectors designed for protecting against metallic (differential mode) and simultaneous longitudinal (common mode) surges. each terminal pair has the same voltage limiting values and surge current capability. this terminal pair surge capability ensures that the protector can meet the simultaneous longitudinal surge requirement which is typically twice the metallic surge requirement. each terminal pair has a symmetrical voltage- triggered thyristor characteristic. overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causesthedevicetocrowbarintoalow-voltage on state. this low-voltage on state causes the current resulting from the overvoltage to be . device v drm v v (bo) v ?7072f3 58 72 ?7082f3 66 82 wave shape standard i tsp a 2/10 gr-1089-core 85 8/20 iec 61000-4-5 80 10/160 fcc part 68 65 10/700 fcc part 68 itu-t k.20/21 50 10/560 fcc part 68 45 10/1000 gr-1089-core 40 available options device package carrier order # tisp7xxxf3 d, small-outline tape and reel tisp7xxxf3dr tube tisp7xxxf3d tisp7xxxf3 p, plastic dip tube tisp7xxxf3p tisp7xxxf3 sl, single-in-line tube tisp7xxxf3sl device symbol g t r sd7xab terminalst,randgcorrespondtothe alternative line designators of a, b and c md7xaaca d package (top view) mdxxal g nu nu g nc t r nc 1 2 3 45 6 7 8 mdxxaja 1 2 3 4 5 6 7 8 r nc t nc g nu nu g p package (top view) nc - no internal connection nu - nonusable; no external electrical connection should be made to these pins. specified ratings require connection of pin 5 and pin 8. sl package (top view) 1 2 3 t g r mdxxaga
tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors 2 march 1994 - revised march 2000 product information description (continued) safely diverted through the device. the high crowbar holding current prevents d.c. latchup as the diverted current subsides.these protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities. these low voltage devices are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. nine similar devices with working voltages from 100 v to 275 v are detailed in the tisp7125f3 thru tisp7380f3 data sheet. absolute maximum ratings, t a = 25 c (unless otherwise noted) rating symbol value unit repetitive peak off-state voltage, 0 c < t a <70c ?7072f3 ?7082f3 v drm 58 66 v non-repetitive peak on-state pulse current (see notes 1 and 2) i ppsm a 1/2 (gas tube differential transient, 1/2 voltage wave shape) 240 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 85 1/20 (itu-t k.22, 1.2/50 voltage wave shape, 25 ? resistor) 45 8/20 (iec 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 80 10/160 (fcc part 68, 10/160 voltage wave shape) 65 4/250 (itu-t k.20/21, 10/700 voltage wave shape, simultaneous) 60 0.2/310 (cnet i 31-24, 0.5/700 voltage wave shape) 50 5/310 (itu-t k.20/21, 10/700 voltage wave shape, single) 50 5/320 (fcc part 68, 9/720 voltage wave shape, single) 50 10/560 (fcc part 68, 10/560 voltage wave shape) 45 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 40 non-repetitive peak on-state current, 0 c < t a <70c (seenotes1and3) 50 hz, 1 s d package ppackage sl package i tsm 4.3 5.7 7.1 a initial rate of rise of on-state current, linear current ramp, maximum ramp value < 38 a di t /dt 250 a/s junction temperature t j -65to+150 c storage temperature range t stg -65to+150 c notes: 1. initially the tisp ? must be in thermal equilibrium at the specified t a . the surge may be repeated after the tisp ? returns to its initial conditions. the rated current values may be applied singly either to the r to g or to the t to g or to the t to r terminals. additionally, both r to g and t to g may have their rated current values applied simultaneously (in this case the total g terminal current will be twice the above rated current values). 2. see thermal information for derated i ppsm values 0 c < t a < 70 c and applications information for details on wave shapes. 3. above 70 c, derate i tsm linearly to zero at 150 c lead temperature.
3 march 1994 - revised march 2000 tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors product information electrical characteristics for all terminal pairs, t a = 25 c (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off- state current v d =v drm ,0c tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors 4 march 1994 - revised march 2000 product information thermal characteristics parameter test conditions min typ max unit r ja junction to free air thermal resistance p tot =0.8w, t a =25c 5cm 2 ,fr4pcb d package 160 c/w p package 100 sl package 135 parameter measurement information figure 1. voltage-current characteristic for t and r terminals t and g and r and g measurements are referenced to the g terminal t and r measurements are referenced to the r terminal -v v drm i drm v d i h i tsm i tsp v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) v drm i drm v d i d i h i tsm i tsp -i quadrant iii switching characteristic pmxxaaa
5 march 1994 - revised march 2000 tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors product information typical characteristics r and g, or t and g terminals figure 2. figure 3. figure 4. figure 5. off-state current t j - junction temperature - c -25 0 25 50 75 100 125 150 i d - off-state current - a 0001 001 01 1 10 100 tc7lac junction temperature vs v d =-50v v d =50v normalised breakdown voltages t j - junction temperature - c -25 0 25 50 75 100 125 150 normalised breakdown voltages 0.9 1.0 1.1 1.2 tc7lae junction temperature vs v (bo) v (br) v (br)m positive polarity normalised to v (br) i (br) =1maand25c normalised breakdown voltages t j - junction temperature - c -25 0 25 50 75 100 125 150 normalised breakdown voltages 0.9 1.0 1.1 1.2 tc7laf junction temperature vs v (bo) v (br) v (br)m negative polarity normalised to v (br) i (br) =1maand25c on-state current v t - on-state voltage - v 23456789 110 i t - on-state current - a 1 10 100 tc7lal on-state voltage vs -40c 150c 25c positive polarity
tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors 6 march 1994 - revised march 2000 product information typical characteristics r and g, or t and g terminals figure 6. figure 7. figure 8. figure 9. on-state current v t - on-state voltage - v 23456789 110 i t - on-state current - a 1 10 100 tc7lam on-state voltage vs -40c 150c 25c negative polarity holding current & breakover current t j - junction temperature - c -25 0 25 50 75 100 125 150 i h ,i (bo) - holding current, breakover current - a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1.0 tc7lah junction temperature vs i h +i (bo) -i (bo) normalised breakover voltage di/dt - rate of rise of principle current - a/s 0001 001 01 1 10 100 normalised breakover voltage 1.0 1.1 1.2 1.3 1.4 1.5 tc7lau positive rate of rise of principle current vs negative surge current decay time - s 10 100 1000 maximum surge current - a 10 100 1000 tc7laa vs decay time 2
7 march 1994 - revised march 2000 tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors product information typical characteristics randtterminals figure 10. figure 11. figure 12. figure 13. off-state current t j - junction temperature - c -25 0 25 50 75 100 125 150 i d - off-state current - a 0001 001 01 1 10 100 tc7lad junction temperature vs normalised breakdown voltages t j - junction temperature - c -25 0 25 50 75 100 125 150 normalised breakdown voltages 0.9 1.0 1.1 1.2 tc7lag junction temperature vs v (bo) v (br) v (br)m on-state current v t - on-state voltage - v 23456789 110 i t - on-state current - a 1 10 100 tc7lak on-state voltage vs -40c 150c 25c holding current & breakover current t j - junction temperature - c -25 0 25 50 75 100 125 150 i h ,i (bo) - holding current, breakover current - a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1.0 tc7laj junction temperature vs i h i (bo)
tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors 8 march 1994 - revised march 2000 product information typical characteristics randtterminals figure 14. n o rmali s ed break o ver v o lta g e di/dt - rate of rise of principle current - a/s 0001 001 01 1 10 100 normalised breakover voltage 1.0 1.1 1.2 1.3 1.4 1.5 tc7lav rate of rise of principle current vs
9 march 1994 - revised march 2000 tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors product information thermal information figure 15. figure 16. maximum non-recurring 50 hz current t-currentduration-s 01 1 10 100 1000 i trms - maximum non-recurrent 50 hz current - a 1 10 vs current duration ti7laa v gen = 250 vrms r gen =10to150 ? ? ? ? d package sl package p package thermal response t-powerpulseduration-s 00001 0001 001 01 1 10 100 1000 z j - transient thermal impedance - c/w 1 10 100 d package p package ti7mab sl package
tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors 10 march 1994 - revised march 2000 product information thermal information non-repetitive peak on-state pulse derated values for 0 c t a 70 c rating symbol value unit non-repetitive peak on-state pulse current, 0 c < t a <70c (seenotes5,6and7) i ppsm a 1/2 (gas tube differential transient, 1/2 voltage wave shape) 130 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 80 1/20 (itu-t k.22, 1.2/50 voltage wave shape, 25 ? resistor) 45 8/20 (iec 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 75 10/160 (fcc part 68, 10/160 voltage wave shape) 55 4/250 (itu-t k.20/21, 10/700 voltage wave shape, dual) 50 0.2/310 (cnet i 31-24, 0.5/700 voltage wave shape) 50 5/310 (itu-t k.20/21, 10/700 voltage wave shape, single) 50 5/320 (fcc part 68, 9/720 voltage wave shape) 50 10/560 (fcc part 68, 10/560 voltage wave shape) 40 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 40 notes: 5. initially the tisp ? must be in thermal equilibrium at the specified t a . the impulse may be repeated after the tisp ? returns to its initial conditions. the rated current values may be applied either to the r to g or to the t to g or to the t to r terminals. additionally, both r to g and t to g may have their rated current values applied simultaneously (in this case the total g terminal current will be twice the above rated current values). 6. see applications information for details on wave shapes. 7. above 70 c, derate i ppsm linearly to zero at 150 c lead temperature.
11 march 1994 - revised march 2000 tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors product information applications information deployment these devices are three terminal overvoltage protectors. they limit the voltage between three points in the circuit. typically, this would be the two line conductors and protective ground (figure 17). in figure 17, protectors th2 and th3 limit the maximum voltage between each conductor and ground to the v (bo) of the individual protector. protector th1 limits the maximum voltage between the two conductors to its v (bo) value. lightning surge wave shape notation most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an exponential decay. wave shapes are classified in terms of rise time in microseconds and a decay time in microseconds to 50% of the maximum amplitude. the notation used for the wave shape is rise time/decay time , without the microseconds quantity and the ?/? between the two values has no mathematical significance. a 50a, 5/310 waveform would have a peak current value of 50 a, a rise time of 5 s and a decay time of 310 s. the tisp ? surge current graph comprehends the wave shapes of commonly used surges. generators there are three categories of surge generator type: single wave shape, combination wave shape and circuit defined. single wave shape generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g. 10/1000 open circuit voltage and short circuit current). combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current (e.g. 1.2/50 open circuit voltage and 8/20 short circuit current) circuit specified generators usually equate to a combination generator, although typically only the open circuit voltage wave shape is referenced (e.g. a 10/700 open circuit voltage generator typically produces a 5/310 short circuit current). if the combination or circuit defined generators operate into a finite resistance the wave shape produced is intermediate between the open circuit and short circuit values. itu-t 10/700 generator this circuit defined generator is specified in many standards. the descriptions and values are not consistent between standards and it is important to realise that it is always the same generator being used. figure 18 shows the 10/700 generator circuit defined in itu-t recommendation k.20 (10/96) ?resistibility of telecommunication switching equipment to overvoltages and overcurrents?. the basic generator comprises of: capacitor c 1 , charged to voltage v c , which is the energy storage element. switch sw to discharge the capacitor into the output shaping network figure 17. multi-point protection th3 th2 th1
tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors 12 march 1994 - revised march 2000 product information shunt resistor r 1 , series resistor r 2 and shunt capacitor c 2 form the output shaping network. series feed resistor r 3 to connect to one line conductor for single surge series feed resistor r 4 to connect to the other line conductor for dual surging in the normal single surge equipment test configuration, the unsurged line is grounded. this is shown by the dotted lines in the top drawing of figure 18. however, doing this at device test places one terminal pair in parallel with another terminal pair. to check the individual terminal pairs of the tisp7xxxf3, without any paralleled operation, the unsurged terminal is left unconnected. with the generator output open circuit, when sw closes, c1 discharges through r 1 . the decay time constant will be c 1 r 1 , or 20 x 50 = 1000 s. for the 50% voltage decay time the time constant needs to be multiplied by 0.697, giving 0.697 x 1000 = 697 s which is rounded to 700 s. the output rise time is controlled by the time constant of r 2 and c 2 . which is 15 x 200 = 3000 ns or 3 s. virtual voltage rise times are given by straight line extrapolation through the 30% and 90% points of the voltage waveform to zero and 100%. mathematically this is equivalent to 3.24 times the time constant, which gives 3.24 x 3 = 9.73 which is rounded to 10 s. thus the open circuit voltage rises in 10 s and decays in 700 s, giving the 10/700 generator its name. when the overvoltage protector switches it effectively shorts the generator output via the series 25 ? resistor. two short circuit conditions need to be considered: single output using r 3 only (top circuit of figure 18) and dual output using r 3 and r 4 (bottom circuit of figure 18). for the single test, the series combination of r 2 and r 3 (15 + 25 = 40 ? )isinshuntwithr 1 . this lowers the discharge resistance from 50 ? to 22.2 ? , giving a discharge time constant of 444 s and a 50% current decay time of 309.7 s, which is rounded to 310 s. for the rise time, r 2 and r 3 are in parallel, reducing the effective source resistance from 15 ? to 9.38 ? , giving a time constant of 1.88 s. virtual current rise times are given by straight line extrapolation through the 10% and 90% points of the current waveform to zero and 100%. mathematically this is equivalent to 2.75 figure 18. c 2 200 nf r 1 50 ? ? ? ? c 1 20 f r 2 15 ? ? ? ? sw v c 2.0 kv r 3 25 ? ? ? ? r t t g t r g r g t and g test randg test r and t test 50 a 5/310 50 a 5/310 10/700 generator - single terminal pair test c 2 200 nf r 1 50 ? ? ? ? c 1 20 f r 2 15 ? ? ? ? sw r 3 25 ? ? ? ? r 4 25 ? ? ? ? r t g dual tandg, randg test 60 a 4/250 60 a 4/250 120 a 4/250 v c 3.3 kv 10/700 generator - dual terminal pair test
13 march 1994 - revised march 2000 tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors product information times the time constant, which gives 2.75 x 1.88 = 5.15, which is rounded to 5 s. thus the short circuit current rises in 5 s and decays in 310 s, giving the 5/310 wave shape. the series resistance from c 1 to the output is 40 ? giving an output conductance of 25 a/kv. for each 1 kv of capacitor charge voltage, 25 a of output current will result. for the dual test, the series combination of r 2 plus r 3 and r 4 in parallel (15 + 12.5 = 27.5 ? ) is in shunt with r 1 . this lowers the discharge resistance from 50 ? to 17.7 ? , giving a discharge time constant of 355 s and a 50% current decay time of 247 s, which is rounded to 250 s. for the rise time, r 2 ,r 3 and r 4 are in parallel, reducing the effective source resistance from 15 ? to 6.82 ? , giving a time constant of 1.36 s, which gives a current rise time of 2.75 x 1.36 = 3.75, which is rounded to 4 s. thus the short circuit current rises in 4 s and decays in 250 s, giving the 4/250 wave shape. the series resistance from c 1 to an individual output is 2 x 27.5 = 55 ? giving an output conductance of 18 a/kv. for each 1 kv of capacitor charge voltage, 18 a of output current will result. at 25 c these protectors are rated at 50 a for the single terminal pair condition and 60 a for the dual condition (r and g terminals and t and g terminals). in terms of generator voltage, this gives a maximum generator setting of 50 x 40 = 2.0 kv for the single condition and 2 x 60 x 27.5 = 3.3 kv for the dual condition. the higher generator voltage setting for the dual condition is due to the current waveform decay being shorter at 250 s compared to the 310 s value of the single condition. other itu-t recommendations use the 10/700 generator: k.17 (11/88) ?tests on power-fed repeaters using solid-state devices in order to check the arrangements for protection from external interference? and k.21(10/ 96) ?resistibility of subscriber's terminal to overvoltages and overcurrents?, k.30 (03/93) ?positive temperature coefficient (ptc) thermistors?. several iec publications use the 10/700 generator, common ones are iec 6100-4-5 (03/95) ?electromagnetic compatibility (emc) - part 4: testing and measurement techniques - section 5: surge immunity test? and iec 60950 (04/99) ?safety of information technology equipment?. the iec 60950 10/700 generator is carried through into other ?950? derivatives. europe is harmonised by cenelec (comit europen de normalization electro-technique) under en 60950 (included in the low voltage directive, ce mark). us has ul (underwriters laboratories) 1950 and canada csa (canadian standards authority) c22.2 no. 950. fcc part 68 ?connection of terminal equipment to the telephone network? (47 cfr 68) uses the 10/700 generator for type b surge testing. part 68 defines the open circuit voltage wave shape as 9/720 and the short circuit current wave shape as 5/320 for a single output. the current wave shape in the dual (longitudinal) test condition is not defined, but it can be assumed to be 4/250. several vde publications use the 10/700 generator, for example: vde 0878 part 200 (12/92) ?electromagnetic compatibility of information technology equipment and telecommunications equipment; immunity of analogue subscriber equipment?. 1.2/50 generators the 1.2/50 open circuit voltage and 8/20 short circuit current combination generator is defined in iec 61000- 4-5 (03/95) ?electromagnetic compatibility (emc) - part 4: testing and measurement techniques - section 5: surge immunity test?. this generator has a fictive output resistance of 2 ? , meaning that dividing the open circuit output voltage by the short circuit output current gives a value of 2 ? (500 a/kv).
tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors 14 march 1994 - revised march 2000 product information the combination generator has three testing configurations; directly applied for testing between equipment a.c. supply connections, applied via an external 10 ? resistor for testing between the a.c. supply connections and ground, and applied via an external 40 ? resistor for testing all other lines. for unshielded unsymmetrical data or signalling lines, the combination generator is applied via a 40 ? resistor either between lines or line to ground. for unshielded symmetrical telecommunication lines, the combination generator is applied to all lines viaaresistorofnx40 ? , where n is the number of conductors and the maximum value of external feed resistance is 250 ? . thus for four conductors n = 4 and the series resistance is 4 x 40 = 160 ? .forten conductors the resistance cannot be 10 x 40 = 400 ? and must be 250 ? . the combination generator is used for short distance lines, long distance lines are tested with the 10/700 generator. when the combination generator is used with a 40 ? , or more, external resistor, the current wave shape is not 8/20, but becomes closer to the open circuit voltage wave shape of 1.2/50. for example, a commercial generator when used with 40 ? produced an 1.4/50 wave shape. the wave shapes of 1.2/50 and 8/20 occur in other generators as well. british telecommunication has a combination generator with 1.2/50 voltage and 8/20 current wave shapes, but it has a fictive resistance of 1 ? . itu-t recommendation k.22 ?overvoltage resistibility of equipment connected to an isdn t/s bus? (05/95) has a 1.2/50 generator option using only resistive and capacitive elements, figure 19. the k.22 generator produces a 1.4/53 open circuit voltage wave. using 25 ? output resistors, gives a single short circuit current output wave shape of 0.8/18 with 26 a/kv and a dual of 0.6/13 with 20 a/kv. these current wave shapes are often rounded to 1/20 and 0.8/14. there are 8/20 short circuit current defined generators. these are usually very high current, 10 ka or more and are used for testing a.c. protectors, primary protection modules and some gas discharge tubes. impulse testing to verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. the table in this section shows some common test values. manufacturers are being increasingly required to design in protection coordination. this means that each protector is operated at its design level and currents are diverted through the appropriate protector e.g. the primary level current through the primary protector and lower levels of current may be diverted through the secondary or inherent equipment protection. without coordination, primary level currents could pass through the equipment only designed to pass secondary level currents. to ensure coordination happens with fixed voltage protectors, some resistance is normally used between the primary and secondary protection (r1a and r1b figure 21). the coordination resistance values given in here apply to a 400 v (d.c. sparkover) gas discharge tube primary protector and the appropriate test voltage when the equipment is tested with a primary protector. figure 19. c 2 30 nf r 1 76 ? ? ? ? c 1 1f r 2 13 ? ? ? ? sw v c 1kv k.22 1.2/50 generator c 3 8nf c 4 8nf note: some standards replace output capacitors with 25 ? ? ? ? resistors
15 march 1994 - revised march 2000 tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors product information if the impulse generator current exceeds the protectors current rating then a series resistance can be used to reduce the current to the protectors rated value and so prevent possible failure. the required value of series resistance for a given waveform is given by the following calculations. first, the minimum total circuit impedance is found by dividing the impulse generators peak voltage by the protectors rated current. the impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then subtracted from the minimum total circuit impedance to give the required value of series resistance. in some cases the equipment will require verification over a temperature range. by using the derated waveform values from the thermal information section, the appropriate series resistor value can be calculated for ambient temperatures in the range of 0 c to 70 c. protection voltage the protection voltage, (v (bo) ), increases under lightning surge conditions due to thyristor regeneration. this increase is dependent on the rate of current rise, di/dt, when the tisp ? is clamping the voltage in its breakdown region. the v (bo) value under surge conditions can be estimated by multiplying the 50 hz rate v (bo) (250 v/ms) value by the normalised increase at the surge?s di/dt. an estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance. as an example, the itu-t recommendation k.21 1.5 kv, 10/700 surge has an average dv/dt of 150 v/s, but, as the rise is exponential, the initial dv/dt is three times higher, being 450 v/s. the instantaneous generator output resistance is 25 ? . if the equipment has an additional series resistance of 20 ? ,thetotalseries resistance becomes 45 ? . the maximum di/dt then can be estimated as 450/45 = 10 a/s. in practice the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the tisp ? breakdown region. capacitance off-state capacitance the off-state capacitance of a tisp ? is sensitive to junction temperature, t j , and the bias voltage, comprising of the dc voltage, v d , and the ac voltage, v d . all the capacitance values in this data sheet are measured with an ac voltage of 1 v rms. when v d >> v d the capacitance value is independent on the value of v d . up to 10 mhz the capacitance is essentially independent of frequency. above 10 mhz the effective capacitance is strongly dependent on connection inductance. for example, a printed wiring (pw) trace of 10 cm could create a circuit resonance with the device capacitance in the region of 80 mhz. standard peak voltage setting v voltage wave form s peak current value a current wave form s tisp7xxxf3 25 c rating a series resistance ? coordination resistance ? (min.) gr-1089-core 2500 2/10 2 x 500 2/10 2 x 85 25 na 1000 10/1000 2 x 100 10/1000 2 x 40 fcc part 68 (march 1998) 1500 10/160 200 10/160 65 16 na 800 10/560 100 10/560 45 10 1000 1500 1500 9/720 ? (single) (dual) 25 37.5 2x27 5/320 ? 5/320 ? 4/250 50 50 2x60 0 i 31-24 1500 0.5/700 37.5 0.2/310 50 0 na itu-t k20/k21 1000 1500 4000 4000 10/700 (single) (single) (dual) 25 37.5 100 2x72 5/310 5/310 5/310 4/250 50 50 50 2x60 0 0 40 12 na na 8 7 ? fcc part 68 terminology for the waveforms produced by the itu-t recommendation k21 10/700 impulse generator na = not applicable, primary protection removed or not specified.
tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors 16 march 1994 - revised march 2000 product information longitudinal balance figure 20 shows a three terminal tisp ? with its equivalent ?delta? capacitance. each capacitance, c tg ,c rg and c tr , is the true terminal pair capacitance measured with a three terminal or guarded capacitance bridge. if wire r is biased at a larger potential than wire t then c tg >c rg . capacitance c tg is equivalent to a capacitance of c rg in parallel with the capacitive difference of (c tg -c rg ). the line capacitive unbalance is due to (c tg -c rg ) and the capacitance shunting the line is c tr +c rg /2 . figure 20. all capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance effects. simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is included.
17 march 1994 - revised march 2000 tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors product information typical circuits figure 21. protection module figure 22. selv data and battery feed protection figure 23. selv data and battery feed with separate rx and tx protected equipment ai7xbp tisp7xxxf3 th3 th2 th1 r1a r1b ring wire tip wire f1a f1b gdtb gdta r1a r1b ai7xbq signal d.c. th3 th2 th1 tisp70xxf3 r1a r1b rx signal d.c. th3 th2 th1 tisp70xxf3 r1a r1b ai7xbr tx signal th3 th2 th1 tisp70xxf3
tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors 18 march 1994 - revised march 2000 product information mechanical data d008 plastic small-outline package this small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly. 5,21 (0.205) 4,60 (0.181) notes: a. leads are within 0,25 (0.010) radius of true position at maximum material condition. b. body dimensions do not include mold flash or protrusion. c. mold flash or protrusion shall not exceed 0,15 (0.006). d. lead tips to be planar within 0,051 (0.002). 1,75 (0.069) 1,35 (0.053) 6,20 (0.244) 5,80 (0.228) 5,00 (0.197) 4,80 (0.189) d008 8 765 4 3 2 1 4,00 (0.157) 3,81 (0.150) 7 nom 3 places 7 nom 4 places 0,51 (0.020) 0,36 (0.014) 8 places pin spacing 1,27 (0.050) (see note a) 6 places 1,12 (0.044) 0,51 (0.020) 4 4 0,79 (0.031) 0,28 (0.011) 0,203 (0.008) 0,102 (0.004) all linear dimensions are in millimeters and parenthetically in inches 8-pin small outline microelectronic standard package ms-012, jedec publication 95 0,50 (0.020) 0,25 (0.010) x45nom 0,229 (0.0090) 0,190 (0.0075) mdxxaac index
19 march 1994 - revised march 2000 tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors product information mechanical data d008 tape dimensions d008 package (8-pin small outline) single-sprocket tape all linear dimensions in millimeters 6,30 6,50 11,70 12,30 5,40 5,60 1,50 1,60 3,90 4,10 7,90 8,10 1,95 2,05 0,8 min. 0min. 0,40 2,0 2,2 direction of feed ?1,5min. carrier tape embossment cover tape notes: a. taped devices are supplied on a reel of the following dimensions:- reel diameter: 330 +0,0/-4,0 mm reel hub diameter: 100 2,0 mm reel axial hole: 13,0 0,2 mm b. 2500 devices are on a reel. mdxxatb
tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors 20 march 1994 - revised march 2000 product information mechanical data p008 plastic dual-in-line package this dual-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions the package is intended for insertion in mounting-hole rows on 7,62 (0.300) centres. once the leads are compressed and inserted, sufficient tension is provided to secure the package in the board during soldering. leads require no additional cleaning or processing when used in soldered assembly. all linear dimensions in millimeters and paranthetically in inches 0,53 (0.021) 0,38 (0.015) 8places 1,78 (0.070) max 4places 6,60 (0.260) 6,10 (0.240) p008 8,23 (0.324) 7,62 (0.300) 9,75 (0.384) 9,25 (0.364) 2,54 (0.100) typical (see note a) 6places 5,08 (0.200) max 3,17 (0.125) min 0,51 (0.020) min 3 12 4 8765 seating plane 9,40 (0.370) 8,38 (0.330) 0,36 (0.014) 0,20 (0.008) notes: a. each pin centreline is located within 0,25 (0.010) of its true longitudinal position. b. dimensions fall within jedec ms001 - r-pdip-t, 0.300" dual-in-line plastic family. c. details of the previous dot index p008 package style, drawing reference mdxxaba, are given in the earlier publications. mdxxcf index notch
21 march 1994 - revised march 2000 tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors product information mechanical data sl003 3-pin plastic single-in-line package this single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly. all linear dimensions in millimeters and paranthetically in inches 2,54 (0.100) typical (see note a) 2places 8,31 (0.327) max sl003 4,267 (0.168) min 1,854 (0.073) max 0,711 (0.028) 0,559 (0.022) 3places 12,9 (0.492) max 6,60 (0.260) 6,10 (0.240) 2 1 3 0,356 (0.014) 0,203 (0.008) 3,40 (0.134) 3,20 (0.126) 9,75 (0.384) 9,25 (0.364) notes: a. each pin centreline is located within 0,25 (0.010) of its true longitudinal position. b. body molding flash of up to 0,15 (0.006) may occur in the package lead plane. c. details of the previous dot index sl003 style, drawing reference mdxxad, are given in the earlier publications. mdxxce index notch
tisp7072f3, tisp7082f3 triple bidirectional thyristor overvoltage protectors 22 march 1994 - revised march 2000 product information important notice power innovations limited (pi) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. pi warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with pi's standard warranty. testing and other quality control techniques are utilized to the extent pi deems necessary to support this warranty. specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. pi assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of pi covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. pi semiconductor products are not designed, intended, authorised, or warranted to be suitable for use in life-support applications, devices or systems. copyright ? 2000, power innovations limited


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